Crystal:CdZnTe CZT
Conductivity type:P type
Orientation:(211), (111)
Doped choice:None,Si,Cr,Fe,Zn
Sizes (mm):10x10mm
Surface Roughness:Surface roughness(Ra): <= 5A
Growth Method:Czochralski method
Crystal Structure:M3
Unit Cell Constant:a=5.65754 Å
Item:2 inch 4H N-type
Diameter:2inch (50.8mm)
Thickness:350+/-25um
Product name:SiC Substrate, SiC semiconductor wafer
Full name:Silicon Carbide Crystal Substrate
Chemical formula:SiC
Structure:R3m, Rhombohedral
Lattice:a0 ~ 4.024Å
Melting Point(℃):1280
Product name:GaAs Substrate
Material:Gallium Arsenide Crystal
Warranty:One year
Product name:CdTe Semiconductor Wafer
Full name:Cadmium Telluride
Chemical formula:CdTe
Product name:Ge semiconductor wafer
Chemical formula:Ge
Size:10x3,10x5,10x10,15x15,,20x15,20x20,dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Product name:PMN-PT Single crystal Substrate
Chemical formula:Pb(Mg1/3Nb2/3)O3-PbTiO3
Crystal orientations:(001), (110), (111)
Product Name:CZT Probe
Material:CdZnTe
Density:5.8g/cm3
Product Name:CZT Probe
Material:CdZnTe
Density:5.8g/cm3