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SiC Semiconductor Wafer Fast Speed Small Strong Great Efficiency Cost-Effective

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SiC Semiconductor Wafer Fast Speed Small Strong Great Efficiency Cost-Effective

SiC Semiconductor Wafer Fast Speed Small Strong Great Efficiency Cost-Effective
SiC Semiconductor Wafer Fast Speed Small Strong Great Efficiency Cost-Effective

Large Image :  SiC Semiconductor Wafer Fast Speed Small Strong Great Efficiency Cost-Effective

Product Details:
Place of Origin: China
Brand Name: Kinheng
Certification: ISO
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: Negotiable
Packaging Details: foam box
Delivery Time: 4-6 weeks
Payment Terms: T/T, Paypal
Supply Ability: 10000pcs/year

SiC Semiconductor Wafer Fast Speed Small Strong Great Efficiency Cost-Effective

Description
Product Name: SiC Substrate, SiC Semiconductor Wafer Full Name: Silicon Carbide Crystal Substrate
Chemical Formula: SiC Grade 1: Production Grade
Grade 2: Research Grade Grade 3: Dummy Grade
Contamination: None Size: 10 Mm X 10 Mm (+/- 1mm)
High Light:

Semiconductor Wafer 10 mm x 10 mm

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SiC Wafer 10 mm x 10 mm

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SiC Semiconductor Wafer

Excellent thermal mechanical properties SiC Substrate SiC semiconductor wafer

 

Silicon Carbide (SiC) wafers are increasingly found semiconductor devices that were once dominated by silicon. Researchers have found that SiC semiconductor devices advantages over silicon wafers based devices include:

  • Faster speed
  • Smaller stronger (Silicon Carbide is one of the strongest materials on earth.)
  • Greater efficiency in normal and adverse condition
  • Cost-effective in many applications.

Properties:

 

Item 2 inch 4H N-type
Diameter 2inch (50.8mm)
Thickness 350+/-25um
Orientation off axis 4.0˚ toward <1120> ± 0.5˚
Primary Flat Orientation <1-100> ± 5°
Secondary Flat
Orientation
90.0˚ CW from Primary Flat ± 5.0˚, Si Face up
Primary Flat Length 16 ± 2.0
Secondary Flat Length 8 ± 2.0
Grade Production grade (P) Research grade (R) Dummy grade (D)
Resistivity 0.015~0.028 Ω·cm < 0.1 Ω·cm < 0.1 Ω·cm
Micropipe Density ≤ 1 micropipes/ cm² ≤ 1 0micropipes/ cm² ≤ 30 micropipes/ cm²
Surface Roughness Si face CMP Ra <0.5nm, C Face Ra <1 nm N/A, usable area > 75%
TTV < 8 um < 10um < 15 um
Bow < ±8 um < ±10um < ±15um
Warp < 15 um < 20 um < 25 um
Cracks None Cumulative length ≤ 3 mm
on the edge
Cumulative length ≤10mm,
single
length ≤ 2mm
Scratches ≤ 3 scratches, cumulative
length < 1* diameter
≤ 5 scratches, cumulative
length < 2* diameter
≤ 10 scratches, cumulative
length < 5* diameter
Hex Plates maximum 6 plates,
<100um
maximum 12 plates,
<300um
N/A, usable area > 75%
Polytype Areas None Cumulative area ≤ 5% Cumulative area ≤ 10%
Contamination None

 

Advantage:

1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance

 

Product shots:

 

SiC Semiconductor Wafer Fast Speed Small Strong Great Efficiency Cost-Effective 0

 

FAQ:

1.Q: Are you a factory manufacturer?

A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.

 

2.Q:Where is your main market?

A:Europe, America, Asia.

 

 

 

 

Contact Details
Kinheng Crystal Material (Shanghai) Co., Ltd.

Contact Person: Ivan. wang

Tel: 18964119345

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