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Product Details:
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| Product Name: | GaAs Substrate | Material: | Gallium Arsenide Crystal |
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| Warranty: | One Year | HS Code: | 3818009000 |
| Advantage: | High Lattice Matching MCT | Application: | Optoelectronics And Microelectronics |
| Growth Method: | LEC HB | Max Size: | Dia 3" |
| High Light: | MCT GaAs Substrate,Kinheng gallium arsenide crystal,High Lattice Matching GaAs Substrate |
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High lattice matching (MCT) GaAs Substrate Single crystal Substrate
Please contact us for options for GaAs crystal substrates and wafers, such as doping, size, surface polishing, and other product parameters.
Properties:
| Crystal | Doped | Conduction Type | Concentration of Flows cm-3 | Density cm-2 | Growth Method Max Size |
| GaAs | None | Si | / | <5×105 | LEC HB Dia3″ |
| Si | N | >5×1017 | |||
| Cr | Si | / | |||
| Fe | N | ~2×1018 | |||
| Zn | P | >5×1017 |
Advantage:
1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance
Product shots:
FAQ:
1.Q: Are you a factory manufacturer?
A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.
2.Q:Where is your main market?
A:Europe, America, Asia.
Contact Person: Ivan. wang
Tel: 18964119345
