Product Details:
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Product Name: | Ge Semiconductor Wafer | Chemical Formula: | Ge |
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Size: | 10x3,10x5,10x10,15x15,,20x15,20x20,dia2” X 0.33mm Dia2” X 0.43mm 15 X 15 Mm | Thickness: | 0.5mm,1.0mm |
Application: | Semiconductor Device , Microelectronics , Sensor , Solar Cell , IR Optics. | Advantage: | Excellent Crystallographic Properties And Unique Electric Properties |
Crystal Structure: | Cubic | Lattice Parameter: | A=0.565754 |
Thermal Conductivity: | 59.9 | ||
High Light: | 0.5mm Semiconductor Crystal Wafer,1.0mm ge wafer,Semiconductor Crystal Wafer |
Sensor Solar cell and Infrared optics applications Ge semiconductor wafer
Ge semiconductor wafer is an elemental and popular semiconductor material , due to its excellent crystallographic properties and unique electric properties , Ge wafer is widly used in Sensor , Solar cell and Infrared optics applications .
Properties:
Growth Method | Czochralski method | ||
Crystal Structure | M3 | ||
Unit Cell Constant | a=5.65754 Å | ||
Density(g/cm3) | 5.323 | ||
Melting Point(℃) | 937.4 | ||
Doped Material | No doped | Sb-doped | In / Ga –doped |
Type | / | N | P |
Resistivity | >35Ωcm | 0.05Ωcm | 0.05~0.1Ωcm |
EPD | <4×103∕cm2 | <4×103∕cm2 | <4×103∕cm2 |
Size | 10x3,10x5,10x10,15x15,,20x15,20x20, | ||
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm | |||
Thickness | 0.5mm,1.0mm | ||
Polishing | Single or double | ||
Crystal Orientation | <100>,<110>,<111>,±0.5º | ||
Ra | ≤5Å(5µm×5µm) |
Advantage:
1.Sb/N doped
2.No doping
3.Semiconductor
Product shots:
FAQ:
1.Q: Are you a factory manufacturer?
A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.
2.Q:Where is your main market?
A:Europe, America, Asia.
Contact Person: Ivan. wang
Tel: 18964119345