|
Product Details:
|
| Structure: | R3m, Rhombohedral | Lattice: | A0 ~ 4.024Å |
|---|---|---|---|
| Melting Point(℃): | 1280 | Density (g/cm3): | 8.1 |
| Piezoelectric Coefficient D33: | >2000 PC/N | Dielectric Loss: | Tan D <0.9 |
| Chemical Composition: | ( PbMg 0.33 Nb 0.67)1-x: (PbTiO3)x | Composition: | Near The Morphotropic Phase Boundary |
| Highlight: | PMN-PT Semiconductor Wafer,R3m single crystal substrate,Kinheng Semiconductor Wafer |
||
High electromechanical coupling coefficient PMN-PT Single crystal Substrate
PMN-PT crystal is known for its extremely high electromechanical coupling coefficient, high piezoelectric coefficient, high strain and low dielectric loss.
Properties:
| Chemical Composition | ( PbMg 0.33 Nb 0.67)1-x: (PbTiO3)x |
| Structure | R3m, Rhombohedral |
| Lattice | a0 ~ 4.024Å |
| Melting Point(℃) |
1280 |
| Density (g/cm3) | 8.1 |
| Piezoelectric Coefficient d33 | >2000 pC/N |
| Dielectric Loss | tan d <0.9 |
| Composition | near the morphotropic phase boundary |
Advantage:
1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance
Product shots:
![]()
FAQ:
1.Q: Are you a factory manufacturer?
A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.
2.Q:Where is your main market?
A:Europe, America, Asia.
Contact Person: Mr. Ivan. wang
Tel: 18964119345
Fax: 86-021-63063530