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Product Details:
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| Item: | 2 Inch 4H N-type | Diameter: | 2inch (50.8mm) |
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| Thickness: | 350+/-25um | Orientation: | Off Axis 4.0˚ Toward <1120> ± 0.5˚ |
| Primary Flat Orientation: | <1-100> ± 5° | Secondary Flat Orientation: | 90.0˚ CW From Primary Flat ± 5.0˚, Si Face Up |
| Primary Flat Length: | 16 ± 2.0 | Secondary Flat Length: | 8 ± 2.0 |
| High Light: | 2 inch silicon carbide wafer,2 inch SiC Substrate,50.8mm silicon carbide wafer |
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Excellent thermal mechanical properties SiC Substrate SiC semiconductor wafer
Silicon carbide (SiC) is a binary compound of Group IV-IV, it's the only stable solid compound in Group IV of the Periodic Table, it's an important semiconductor. SiC has excellent thermal, mechanical, chemical and electrical properties, which make it to be the one of the best materials for making high-temperature, high-frequency, and high-power electronic devices, the SiC also can be used as a substrate material for GaN-based blue light-emitting diodes. At present, 4H-SiC is the mainstream products in the market, and the conductivity type is divided into semi-insulating type and N type.
Properties:
| Item | 2 inch 4H N-type | ||
| Diameter | 2inch (50.8mm) | ||
| Thickness | 350+/-25um | ||
| Orientation | off axis 4.0˚ toward <1120> ± 0.5˚ | ||
| Primary Flat Orientation | <1-100> ± 5° | ||
| Secondary Flat Orientation |
90.0˚ CW from Primary Flat ± 5.0˚, Si Face up | ||
| Primary Flat Length | 16 ± 2.0 | ||
| Secondary Flat Length | 8 ± 2.0 | ||
| Grade | Production grade (P) | Research grade (R) | Dummy grade (D) |
| Resistivity | 0.015~0.028 Ω·cm | < 0.1 Ω·cm | < 0.1 Ω·cm |
| Micropipe Density | ≤ 1 micropipes/ cm² | ≤ 1 0micropipes/ cm² | ≤ 30 micropipes/ cm² |
| Surface Roughness | Si face CMP Ra <0.5nm, C Face Ra <1 nm | N/A, usable area > 75% | |
| TTV | < 8 um | < 10um | < 15 um |
| Bow | < ±8 um | < ±10um | < ±15um |
| Warp | < 15 um | < 20 um | < 25 um |
| Cracks | None | Cumulative length ≤ 3 mm on the edge |
Cumulative length ≤10mm, single length ≤ 2mm |
| Scratches | ≤ 3 scratches, cumulative length < 1* diameter |
≤ 5 scratches, cumulative length < 2* diameter |
≤ 10 scratches, cumulative length < 5* diameter |
| Hex Plates | maximum 6 plates, <100um |
maximum 12 plates, <300um |
N/A, usable area > 75% |
| Polytype Areas | None | Cumulative area ≤ 5% | Cumulative area ≤ 10% |
| Contamination | None | ||
Advantage:
1.High smoothness
2.High lattice matching (MCT)
3.Low dislocation density
4.High infrared transmittance
Product shots:
FAQ:
1.Q: Are you a factory manufacturer?
A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.
2.Q:Where is your main market?
A:Europe, America, Asia.
Contact Person: Ivan. wang
Tel: 18964119345
