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Product Details:
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| Growth Method: | Czochralski Method | Crystal Structure: | M3 |
|---|---|---|---|
| Unit Cell Constant: | A=5.65754 Å | Density(g/cm3): | 5.323 |
| Melting Point(℃): | 937.4 | Crystal Orientation: | <100>,<110>,<111>,±0.5º |
| Ra: | ≤5Å(5µm×5µm) | Polishing: | Single Or Double |
| High Light: | Ge Semiconductor Wafer,ge substrate IC Industry,M3 Semiconductor Wafer |
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Infrared and IC industry Ge substrate Ge semiconductor wafer
Germanium is a chemical element with the symbol Ge and atomic number 32. It is a lustrous, hard-brittle, grayish white metalloid in the carbon group, chemically similar to its group neighbors silicon and tin.Ge single crystal is excellent semiconductor for Infrared and IC industry.
Properties:
| Growth Method | Czochralski method | ||
| Crystal Structure | M3 | ||
| Unit Cell Constant | a=5.65754 Å | ||
| Density(g/cm3) | 5.323 | ||
| Melting Point(℃) | 937.4 | ||
| Doped Material | No doped | Sb-doped | In / Ga –doped |
| Type | / | N | P |
| Resistivity | ＞35Ωcm | 0.05Ωcm | 0.05~0.1Ωcm |
| EPD | ＜4×103∕cm2 | ＜4×103∕cm2 | ＜4×103∕cm2 |
| Size | 10x3,10x5,10x10,15x15,,20x15,20x20, | ||
| dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm | |||
| Thickness | 0.5mm,1.0mm | ||
| Polishing | Single or double | ||
| Crystal Orientation | <100>,<110>,<111>,±0.5º | ||
| Ra | ≤5Å(5µm×5µm) | ||
Advantage:
1.Sb/N doped
2.No doping
3.Semiconductor
Product shots:
FAQ:
1.Q: Are you a factory manufacturer?
A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.
2.Q:Where is your main market?
A:Europe, America, Asia.
Contact Person: Ivan. wang
Tel: 18964119345
