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High-temperature superconducting thin film LaAlO3 single crystal substrate

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High-temperature superconducting thin film LaAlO3 single crystal substrate

High-temperature superconducting thin film LaAlO3 single crystal substrate
High-temperature superconducting thin film LaAlO3 single crystal substrate

Large Image :  High-temperature superconducting thin film LaAlO3 single crystal substrate

Product Details:
Place of Origin: China
Brand Name: Kinheng
Certification: ISO
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: Negotiable
Packaging Details: foam box
Delivery Time: 4-6 weeks
Payment Terms: T/T, Paypal
Supply Ability: 10000pcs/year

High-temperature superconducting thin film LaAlO3 single crystal substrate

Description
Melting Point(℃): 2080 Density(g/cm3): 6.52
Hardness (Mho): 6-6.5 Thermal Expansion: 9.4x10-6/℃
Dielectric Constants: ε=21 Secant Loss(10ghz): ~3×10-4@300k,~0.6×10-4@77k
Color And Appearance: To Anneal And Conditions Differ From Brown To Brownish Growth Method: Czochralski

High-temperature superconducting thin film LaAlO3 single crystal substrate

 

LaAlO3 single crystal is the most important industrialized, large-size high-temperature superconducting thin film substrate single crystal material. Its growth with the Czochralski method , 2 inches in diameter and larger single crystal and the substrate can be obtained. It's suitable for the production of high temperature superconducting microwave electronic devices (such as long-distance communication in high-temperature superconducting microwave filters etc.)

 

Properties:

 

Crystal Structure M6(normal temperature) M3(>435℃)
Unit Cell Constant M6 a=5.357A c=13.22 A M3 a=3.821 A
Melting Point(℃) 2080
Density(g/cm3) 6.52
Hardness (Mho) 6-6.5
Thermal Expansion 9.4x10-6/℃
Dielectric Constants ε=21
Secant Loss(10ghz) ~3×10-4@300k,~0.6×10-4@77k
Color and Appearance To anneal and conditions differ from brown to brownish
Chemical Stability Room temperature is not dissoluble in minerals, the temperature is greater than 150 ℃ in soluble h3po4
Characteristics For microwave electron device
Growth Method Czochralski method
Size 10x3,10x5,10x10,15x15,,20x15,20x20,
Ф15,Ф20,Ф1″,Ф2″,Ф2.6″
Thickness 0.5mm,1.0mm
Polishing Single or double
Crystal Orientation <100> <110> <111>
Redirection Precision ±0.5°
Redirection the Edge 2°(special in 1°)
Angle of Crystalline Special size and orientation are available upon request
Ra ≤5Å(5µm×5µm)
Pack 100 clean bag,1000 exactly clean bag

 

Advantage:

1.Low dielectric constant

2.Low Microwave loss

3.High-temperature superconducting thin film

 

Product shots:

High-temperature superconducting thin film LaAlO3 single crystal substrate 0

 

FAQ:

1.Q: Are you a factory manufacturer?

A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.

 

2.Q:Where is your main market?

A:Europe, America, Asia.

Contact Details
Kinheng Crystal Material (Shanghai) Co., Ltd.

Contact Person: Ivan. wang

Tel: 18964119345

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