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45x45mm 45x50mm BGO crystal substrate High Sensitive Read Write Holographic Memorys

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45x45mm 45x50mm BGO crystal substrate High Sensitive Read Write Holographic Memorys

45x45mm 45x50mm BGO crystal substrate High Sensitive Read Write Holographic Memorys
45x45mm 45x50mm BGO crystal substrate High Sensitive Read Write Holographic Memorys

Large Image :  45x45mm 45x50mm BGO crystal substrate High Sensitive Read Write Holographic Memorys

Product Details:
Place of Origin: China
Brand Name: Kinheng
Certification: ISO
Payment & Shipping Terms:
Minimum Order Quantity: 1pc
Price: Negotiable
Packaging Details: foam box
Delivery Time: 4-6 weeks
Payment Terms: T/T, Paypal
Supply Ability: 10000pcs/year

45x45mm 45x50mm BGO crystal substrate High Sensitive Read Write Holographic Memorys

Description
Product Name: BGO Piezoelectric Crystal Substrate Chemical Formula: Bi12GeO20
Crystal: Piezoelectric Electro-optic Coefficient: R41 = 3.4 X 10-12 M/V
Resistivity: 8 X 1011W-cm Loss Tangent: 0.0035
Orientation: (110), (001) Typic Dimension: Dia45x45mm And Dia45x50mm
Color: Transparent And Brown
High Light:

45x45mm BGO crystal substrate

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Piezoelectric single crystal

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45x50mm BGO crystal substrate

High sensitive read write holographic memory BGO piezoelectric crystal substrate

 

Bismuth germanate (Bi12GeO20) has high electro-optic coefficients (3.3 pm/V for Bi12GeO20) making it useful in nonlinear optics for building Pockels cells, and can also be used forphotorefractive devices for ultraviolet range. The Bi12GeO20 crystals are piezoelectric, show strong electro-optical and acousto-optical effects, and find limited use in the field of crystal oscillators and SAW devices. Single crystal rods and fibers can be grown by floating zone process from a rod of mixture of bismuth oxide and germanium oxide.The crystals are transparent and brown colored.

 

Properties:

 

Crystal Bi12GeO20 (BGO)
System Cubic, 23
Melting Point(℃) 930
Density(g/cm3) 9.2
Hardness (Mho) 4.5
Transparencey Range(nm) 470 – 7500
Transmittance at 633 nm 67%
Refractive Index at 633 nm 2.55
Dielectric Constant 40
Electro-optic Coefficient r41 = 3.4 x 10-12 m/V
Resistivity 8 x 1011W-cm
Loss Tangent 0.0035

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Advantage:

1.High stability SAW/BAW domain / time domain device

2.High sensitive read write holographic memory

 

Product shots:

45x45mm 45x50mm BGO crystal substrate High Sensitive Read Write Holographic Memorys 0

 

FAQ:

1.Q: Are you a factory manufacturer?

A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.

 

2.Q:Where is your main market?

A:Europe, America, Asia.

Contact Details
Kinheng Crystal Material (Shanghai) Co., Ltd.

Contact Person: Ivan. wang

Tel: 18964119345

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