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Product Details:
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| Crystal Purity: | > 99.99% | Melt Point(℃): | 2040 |
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| Density(g/cm3): | 3.98 | Hardness (Mho): | 9 |
| Thermal Expansion: | 7.5 (x10-6/ OC) | Specific Heat: | 0.10 ( Cal / OC) |
| Product Name: | Sapphire Single Crystal Substrate, Sapphire Wafer, Al2O3 Wafer | Crystal Structure: | Hexagonal System |
| High Light: | 3.98g/cm3 Sapphire Crystal Wafer,Hexagonal Al2O3 Substrate,9Mho Sapphire Crystal Wafer |
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Superconducting film substrate Al2O3 Substrate Sapphire Crystal wafer
Sapphire (Al2O3) single crystal is also a kind of widely used single crystal substrate material. It is the first choice substrate in the current blue, violet, white light-emitting diode (LED) and blue laser (LD) industry (gallium nitride film needs to be epitaxial on the sapphire substrate first), and it is also an important superconducting film substrate. In addition to the Y-system, La system and other high-temperature superconducting films, it can also be used to grow new practical MgB2 (magnesium diboride) superconducting films (usually the single-crystal substrate will be chemically corroded during the fabrication of MgB2 films).
Properties:
| Crystal Purity | > 99.99% |
| Melt Point(℃) | 2040 |
| Density(g/cm3) | 3.98 |
| Hardness (Mho) | 9 |
| Thermal Expansion | 7.5 (x10-6/ oC) |
| Specific Heat | 0.10 ( cal / oC) |
| Thermal Conductivity | 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) |
| Dielectric Constant | ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis |
| Loss Tangent at 10 GHz | < 2x10-5 at A axis , <5 x10-5 at C axis |
Advantage:
1.Heat conduction
2.High hardness
3.Infrared transmission
4.Good chemical stability
Product shots:
FAQ:
1.Q: Are you a factory manufacturer?
A: Yes ,we are manufacturer with 13 years experience in the scintillator crystal industry and supplied many famous brands with good quality and service.
2.Q:Where is your main market?
A:Europe, America, Asia.
Contact Person: Ivan. wang
Tel: 18964119345
